TIA Standards developed by committee JC-14.02

JEP119 - A Procedure for Executing SWEAT
JEP128 - Guide for Standard Probe Pad Sizes and Layouts for Wafer-Level Electrical Testing
JESD28 - A Procedure for Measuring N-Channel MOSFET Hot-Carrier-Induced Degradation at Maximum Substrate Current Under DC Stress
JESD33-A - Standard Method for Measuring and Using the Temperature Coefficient of Resistance to Determine the Temperature of a Metallization Line
JESD35 - Procedure for the Wafer-Level Testing of Thin Dielectrics
JESD35-1 - Addendum No. 1 to JESD35 - General Guidelines for Designing Test Structures for the Wafer-Level Testing of Thin Dielectrics
JESD35-2 - Addendum No. 2 to JESD35 - Test Criteria for the Wafer-Level Testing of Thin Dielectrics
JESD37 - Standard Lognormal Analysis of Uncensored Data, and of Singly Right-Censored Data Utilizing the Persson and Rootzen Method
JESD60 - A Procedure for Measuring P-Channel MOSFET Hot-Carrier-Induced Degradation at Maximum Gate Current Under DC Stress
JESD61 - Isothermal Electromigration Test Procedure
JESD63 - Standard Method for Calculating the Electromigration Model Parameters for Current Density and Temperature