TIA Standards developed by committee JC-25

EIA-284-A - Test Methods for the Collector-Base Time Constant and for the Resistive Part of the Common-Emitter Input Impedance
EIA-302 - Ranges and Conditions for Specifying Beta for Low Power Audio Frequency Transistors for Entertainment Service
EIA-306 - Measurement of Small-Signal HF, VHF, and UHF Power Gain of Transistors
EIA-311-A - Measurement of Transistor Noise Figure at MF, HF, and VHF
EIA-313-B - Thermal Resistance Measurements of Conduction Cooled Power Transistors
EIA-340 - Standard for the Measurement of |Cre|
EIA-353 - The Measurement of Transistor Noise Figure at Frequencies up to 20 kHz by Sinusoidal Signal-Generator Method
EIA-354 - The Measurement of Transistor Equivalent Noise Voltage and Equivalent Noise Current at Frequencies of up to 20 kHz
EIA-371 - The Measurement of Small-Signal VHF-UHF Transistor Short-Circuit Forward Current Transfer Ratio
EIA-372 - The Measurement of Small-Signal VHF-UHF Transistor Admittance Parameters
EIA-398 - Measurement of Small Values of Transistor Capacitance
EIA-419-A - Standard List of Values to Be Used in Semiconductor Device Specifications and Registration Format
EIA-435 - Standard for the Measurement of Small-Signal Transistor Scattering Parameters
JEP115 - Power MOSFET Electrical Dose Rate Test Method
JEP138 - User Guidelines for IR Thermal Imaging Determination of Die Temperature
JEP65 - Test Procedures for Verification of Maximum Ratings of Power Transistors
JEP74 - Standard List of Values to Be Used in Power Transistor Device Registration and Minimum Differences for Discreteness of Registrations
JESD10 - Low Frequency Power Transistors
JESD24 - Power MOSFETs
JESD24-1 - Addendum No. 1 to JESD24 - Method for Measurement of Power Device Turn-Off Switching Loss
JESD24-10 - Addendum No. 10 to JESD24 - Test Method for Measurement of Reverse Recovery Time trr for Power MOSFET Drain-Sources Diodes
JESD24-11 - Addendum No. 11 to JESD24 - Power MOSFET Equivalent Series Gate Resistance Test Method
JESD24-2 - Addendum No. 2 to JESD24 - Gate Charge Test Method
JESD24-3 - Addendum No. 3 to JESD24 - Thermal Impedance Measurements for Vertical Power MOSFETs (Delta Source-Drain Voltage Method)
JESD24-4 - Addendum No. 4 to JESD24 - Thermal Impedance Measurements for Bipolar Transistors (Delta Base-Emitter Voltage Method)
JESD24-5 - Addendum No. 5 to JESD24 - Single Pulse Unclamped Inductive Switching (UIS) Avalanche Test Method
JESD24-6 - Addendum No. 6 to JESD24 - Thermal Impedance Measurements for Insulated Gate Bipolar Transistors
JESD24-7 - Addendum No. 7 to JESD24 - Commutating Diode Safe Operating Area Test Procedure for Measuring dv/dt During Reverse Recovery of Power Transistors
JESD24-8 - Addendum No. 8 to JESD24 - Method for Repetitive Inductive Load Avalanche Switching
JESD24-9 - Addendum No. 9 to JESD24 - Short Circuit Withstand Time Test Method
JESD25 - Measurement of Small-Signal Transistor Scattering Parameters (Reaffirmed: April, 1999)
JESD6 - Measurement of Small Values of Transistor Capacitance (Reaffirmed April 1999)